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| V58C2128(804/404/164)S HIGH PERFORMANCE 2.5 VOLT 128 Mbit DDR SDRAM 4 BANKS X 4Mbit X 8 (804) 4 BANKS X 2Mbit X 16 (164) 4 BANKS X 8Mbit X 4 (404) 6 DDR333B 7 DDR266A 7.5ns 7ns 143 MHz 75 PRELIMINARY Features High speed data transfer rates with system frequency up to 166 MHz Data Mask for Write Control Four Banks controlled by BA0 & BA1 Programmable CAS Latency: 2, 2.5 Programmable Wrap Sequence: Sequential or Interleave Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type Automatic and Controlled Precharge Command Power Down Mode Auto Refresh and Self Refresh Refresh Interval: 4096 cycles/64 ms Available in 66-pin 400 mil TSOP SSTL-2 Compatible I/Os Double Data Rate (DDR) Bidirectional Data Strobe (DQS) for input and output data, active on both edges On-Chip DLL aligns DQ and DQs transitions with CK transitions Differential clock inputs CK and CK Power Supply 2.5V 0.2V QFC options for FET control. x4 parts. *Note: DDR 333B Supports PC2700 module with 2.5-3-3 timing DDR 266A Supports PC2100 module with 2-3-3 timing DDR 266B Supports PC2100 module with 2.5-3-3 timing DDR 200 Supports PC1600 module with 2-2-2 timing CILETIV LESO M 8 DDR200 10 ns 8 ns 125 MHz DDR266B 10 ns 7.5 ns 133 MHz Clock Cycle Time (tCK2) Clock Cycle Time (tCK2.5) System Frequency (fCK max ) 7.5 ns 6 ns 167 MHz Description The V58C2128(804/404/164)S is a four bank DDR DRAM organized as 4 banks x 4Mbit x 8 (804), 4 banks x 2Mbit x 16 (404), or 4 banks x 8Mbit x 4 (164). The V58C2128(804/404/164)S achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. All of the control, address, circuits are synchronized with the positive edge of an externally supplied clock. I/O transactions are ocurring on both edges of DQS. Operating the four memory banks in an interleaved fashion allows random access operation to occur at a higher rate than is possible with standard DRAMs. A sequential and gapless data rate is possible depending on burst length, CAS latency and speed grade of the device. Device Usage Chart Operating Temperature Range 0C to 70C Package Outline JEDEC 66 TSOP II * CK Cycle Time (ns) -6 * Power -8 * -7 * -75 * Std. * L * Temperature Mark Blank V58C2128(804/404/164)S Rev.1.6 March 2002 1 V58C2128(804/404/164)S 66 Pin Plastic TSOP-II PIN CONFIGURATION Top View 8Mb x 16 16Mb x 8 32Mb x 4 Pin Names CK, CK CKE CS RAS CAS WE DQS (UDQS, LDQS) A0-A11 BA0, BA1 Differential Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Data Strobe (Bidirectional) Address Inputs Bank Select DQ's DM (UDM, LDM) VDD VSS VDDQ VSSQ NC VREF QFC Data Input/Output Data Mask Power (+2.5V) Ground Power for I/O's (+2.5V) Ground for I/O's Not connected Reference Voltage for Inputs FET Control CILETIV LESO M VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ NC DQ3 VSSQ NC NC VDDQ NC NC VDD VDD NC VDDQ NC DQ0 VSSQ NC NC VDDQ NC DQ1 VSSQ NC NC VDDQ NC NC VDD 1 2 3 4 5 6 7 8 9 10 11 12 66 PIN TSOP (II) 13 (400mil x 875 mil) 14 15 Bank Address BA0-BA1 16 17 Row Address 18 A0-A11 19 20 Auto Precharge A10 21 22 23 24 25 26 27 28 29 30 31 32 33 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 VSS NC VSSQ NC DQ3 VDDQ NC NC VSSQ NC DQ2 VDDQ NC NC VSSQ DQS NC VREF VSS DM CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS VSS DQ7 VSSQ NC DQ5 VDDQ NC DQ5 VSSQ NC DQ4 VDDQ NC NC VSSQ DQS NC VREF VSS DM CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS VSS DQ15 VSSQ DQ14 DQ13 VDDQ DQ12 DQ11 VSSQ DQ10 DQ9 VDDQ DQ8 NC VSSQ UDQS NC VREF VSS UDM CK CK CKE NC NC A11 A9 A8 A7 A6 A5 A4 VSS QFC/NC QFC/NC QFC/NC NC NC NC WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD V58C2128(804/404/164)S Rev. 1.6 March 2002 2 V58C2128(804/404/164)S Column decoder Sense amplifier & I(O) bus Column decoder Sense amplifier & I(O) bus Column decoder Sense amplifier & I(O) bus Bank 0 Bank 1 Bank 2 Column decoder Sense amplifier & I(O) bus CKE CK, CK DLL Strobe Gen. Data Strobe DQS V58C2128(804/404/164)S Rev. 1.6 March 2002 3 QFC CAS RAS WE DM CK CK CS CILETIV LESO M V MOSEL VITELIC MANUFACTURED 58 C 2 128(80/40/16) 4 S X T XX SPEED 6 (166MHZ@CL2.5) 7 (143MHZ@CL2.5)) 75(133MHZ@CL2.5) 8 (125MHZ@CL2.5) COMPONENT PACKAGE, T = TSOP DDRSDRAM CMOS 2.5V 128Mb, 4K Refresh x8, x4, x16 4 Banks SSTL COMPONENT REV LEVEL Block Diagram 32M x 4 Column Addresses A0 - A9, A11, AP, BA0, BA1 Row Addresses A0 - A11, BA0, BA1 Column address counter Column address buffer Row address buffer Refresh Counter Row decoder Memory array Row decoder Memory array Row decoder Memory array Row decoder Memory array Bank 3 4096 x 1024 x8 4096 x 1024 x8 4096 x 1024 x8 4096 x 1024 x8 Input buffer Output buffer Control logic & timing generator DQ0-DQ3 V58C2128(804/404/164)S Block Diagram Column Addresses Column decoder Sense amplifier & I(O) bus Column decoder Sense amplifier & I(O) bus Column decoder Sense amplifier & I(O) bus Bank 0 Bank 1 Bank 2 Column decoder Sense amplifier & I(O) bus CKE RAS CK, CK DLL Strobe Gen. Data Strobe DQS V58C2128(804/404/164)S Rev. 1.6 March 2002 4 QFC CAS WE DM CK CK CS CILETIV LESO M 16M x 8 Row Addresses A0 - A11, BA0, BA1 A0 - A9, AP, BA0, BA1 Column address counter Column address buffer Row address buffer Refresh Counter Row decoder Memory array Row decoder Memory array Row decoder Memory array Row decoder Memory array Bank 3 4096 x 512 x 16 bit 4096 x 512 x 16 bit 4096 x 512 x 16 bit 4096 x 512 x 16 bit Input buffer Output buffer Control logic & timing generator DQ0-DQ7 V58C2128(804/404/164)S Block Diagram Column decoder Sense amplifier & I(O) bus Bank 0 Column decoder Sense amplifier & I(O) bus Bank 1 Column decoder Sense amplifier & I(O) bus Bank 2 Column decoder Sense amplifier & I(O) bus CKE CK, CK DLL Strobe Gen. Data Strobe DQS Capacitance* TA = 0 to 70C, VCC = 2.5V 0.2V, f = 1 Mhz Input Capacitance BA0, BA1, CKE, CS, RAS, (CAS, A0-A11, WE) Input Capacitance (CK, CK) Data & DQS I/O Capacitance Input Capacitance (DM) Symbol Min CINI CIN2 COUT CIN3 2 2 4 4 Absolute Maximum Ratings* Max Unit 3.0 3.0 5 5.0 pF pF pF pF *Note: Capacitance is sampled and not 100% tested. Operating temperature range ..................0 to 70 C Storage temperature range ................-55 to 150 C VDDSupply Voltage Relative to VSS.....-1V to +3.6V VDDQ Supply Voltage Relative to VSS ......................................................-1V to +3.6V VREF and Inputs Voltage Relative to VSS ......................................................-1V to +3.6V I/O Pins Voltage Relative to VSS .......................................... -0.5V to VDDQ+0.5V Power dissipation .......................................... 1.6 W Data out current (short circuit) ...................... 50 mA *Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. V58C2128(804/404/164)S Rev. 1.6 March 2002 5 QFC RAS CAS WE DM CK CK CS CILETIV LESO M 8M x 16 Column Addresses A0 - A8, AP, BA0, BA1 Row Addresses A0 - A11, BA0, BA1 Column address counter Column address buffer Row address buffer Refresh Counter Row decoder Memory array Row decoder Memory array Row decoder Memory array Row decoder Memory array Bank 3 4096 x 256 x 32 bit 4096 x 256 x 32 bit 4096 x 256 x 32 bit 4096 x 256 x 32 bit Input buffer Output buffer Control logic & timing generator DQ0-DQ15 V58C2128(804/404/164)S CILETIV LESO M Signal Pin Description Pin CK CK CKE Type Input Signal Pulse Polarity Positive Edge Function The system clock input. All inputs except DQs and DMs are sampled on the rising edge of CK. Input Level Active High Activates the CK signal when high and deactivates the CK signal when low, thereby initiates either the Power Down mode, or the Self Refresh mode. Active Low CS enables the command decoder when low and disables the command decoder when high. When the command decoder is disabled, new commands are ignored but previous operations continue. Active Low When sampled at the positive rising edge of the clock, CAS, RAS, and WE define the command to be executed by the SDRAM. Active High Active on both edges for data input and output. Center aligned to input data Edge aligned to output data -- During a Bank Activate command cycle, A0-A11 defines the row address (RA0-RA11) when sampled at the rising clock edge. During a Read or Write command cycle, A0-An defines the column address (CA0-CAn) when sampled at the rising clock edge.CAn depends on the SDRAM organization: 32M x 4 DDR CAn = CA9, A11 16M x 8 DDR CAn = CA9 8M x 16 DDR CAn = CA8 In addition to the column address, A10(=AP) is used to invoke autoprecharge operation at the end of the burst read or write cycle. If A10 is high, autoprecharge is selected and BA0, BA1 defines the bank to be precharged. If A10 is low, autoprecharge is disabled. During a Precharge command cycle, A10(=AP) is used in conjunction with BA0 and BA1 to control which bank(s) to precharge. If A10 is high, all four banks will be precharged simultaneously regardless of state of BA0 and BA1. CS Input Pulse RAS, CAS WE DQS Input Pulse Input/ Output Pulse A0 - A11 Input Level BA0, BA1 DQx Input Level -- Selects which bank is to be active. Input/ Output Input Level -- Data Input/Output pins operate in the same manner as on conventional DRAMs. DM, LDM, UDM QFC Pulse Active High In Write mode, DM has a latency of zero and operates as a word mask by allowing input data to be written if it is low but blocks the write operation if is high for x 16 LDM corresponds to data on DQ0-DQ7, UDM corresponds to data on DQ8-DQ15. Active Low FET Control: Output during every read and write access. Can be used to control isolation switches on modules. Power and ground for the input buffers and the core logic. Output Level VDD, VSS Supply VDDQ VSSQ VREF Supply -- -- Isolated power supply and ground for the output buffers to provide improved noise immunity. SSTL Reference Voltage for Inputs Input Level -- V58C2128(804/404/164)S Rev. 1.6 March 2002 6 V58C2128(804/404/164)S The mode register stores the data for controlling the various operating modes of DDR SDRAM. It programs CAS latency, addressing mode, burst length, test mode, DLL reset and various vendor specific options to make DDR SDRAM useful for a variety of different applications. The default value of the mode register is not defined, therefore the mode register must be written after EMRS setting for proper DDR SDRAM operation. The mode register is written by asserting low on CS, RAS, CAS, WE and BA0 (The DDR SDRAM should be in all bank precharge with CKE already high prior to writing into the mode register). The state of address pins A0 ~ A11 in the same cycle as CS, RAS, CAS, WE and BA0 low is written in the mode register. Two clock cycles are required to meet tMRD spec. The mode register contents can be changed using the same command and clock cycle requirements during operation as long as all banks are in the idle state. The mode register is divided into various fields depending on functionality. The burst length uses A0 ~ A2, addressing mode uses A3, CAS latency (read latency from column address) uses A4 ~ A6. A7 is a Mosel Vitelic specific test mode during production test. A8 is used for DLL reset. A7 must be set to low for normal MRS operation. Refer to the table for specific codes for various burst length, addressing modes and CAS latencies. 1. MRS can be issued only at all banks precharge state. 2. Minimum tRP is required to issue MRS command. CILETIV LESO M Mode Register Set (MRS) BA1 BA 0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 Address Bus 0 MRS RFU : Must be set "0" QFC I/O DLL Extended Mode Register Mode Register 0 MRS RFU DLL TM CAS Latency BT Burst Length A8 0 1 BA0 0 1 An ~ A0 DLL Reset No Yes A7 0 1 mode Normal Test A4 0 1 0 1 0 1 0 1 Latency Reserve Reserve 2 3 Reserve Reserve 2.5 Reserve A3 0 1 Burst Type Sequential Interleave Burst Length A2 0 0 0 0 1 1 1 1 A1 0 0 1 1 0 0 1 1 A0 0 1 0 1 0 1 0 1 A1 0 1 I/O Strength Full Half A0 0 1 DLL Enable Enable Disable CAS Latency A6 A5 0 0 0 0 1 * RFU(Reserved for future use) should stay "0" during MRS cycle. 1 1 1 0 0 1 1 0 0 1 1 (Existing)MRS Cycle Extended Funtions(EMRS) Latency Sequential Reserve 2 4 8 Reserve Reserve Reserve Reserve Interleave Reserve 2 4 8 Reserve Reserve Reserve Reserve A2 0 1 QFC Control Disable Enable Mode Register Set 0 CK, CK Command tCK 1 2 3 *1 Mode Register Set 4 5 6 7 8 Precharge All Banks Any Command tRP *2 tMRD V58C2128(804/404/164)S Rev. 1.6 March 2002 7 V58C2128(804/404/164)S Mode Register Set Timing Burst Mode Operation is used to provide a constant flow of data to memory locations (Write cycle), or from memory locations (Read cycle). Two parameters define how the burst mode will operate: burst sequence and burst length. These parameters are programmable and are determined by address bits A0--A3 during the Mode Register Set command. Burst type defines the sequence in which the burst data will be delivered or stored to the SDRAM. Two types of burst sequence are supported: sequential and interleave. The burst length controls the number of bits that will be output after a Read command, or the number of bits to be input after a Write command. The burst length can be programmed to values of 2, 4, or 8. See the Burst Length and Sequence table below for programming information. CILETIV LESO M T0 T1 tCK T2 T3 tRP T4 T5 tMRD T6 T7 T8 T9 CK, CK Command Pre- All MRS/EMRS ANY Mode Register set (MRS) or Extended Mode Register Set (EMRS) can be issued only when all banks are in the idle state. If a MRS command is issued to reset the DLL, then an additional 200 clocks must occur prior to issuing any new command to allow time for the DLL to lock onto the clock. Burst Mode Operation Burst Length and Sequence Burst Length 2 xx1 x00 x01 4 x10 x11 000 001 010 011 8 100 101 110 111 4, 5, 6, 7, 0, 1, 2, 3 5, 6, 7, 0, 1, 2, 3, 4 6, 7, 0, 1, 2, 3, 4, 5 7, 0, 1, 2, 3, 4, 5, 6 4, 5, 6, 7, 0, 1, 2, 3 5, 4, 7, 6, 1, 0, 3, 2 6, 7, 4, 5, 2, 3, 0, 1 7, 6, 5, 4, 3, 2, 1, 0 2, 3, 0, 1 3, 0, 1, 2 0,1, 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7, 0 2, 3, 4, 5, 6, 7, 0, 1 3, 4, 5, 6, 7, 0, 1, 2 2, 3, 0, 1 3, 2, 1, 0 0,1, 2, 3, 4, 5, 6, 7 1, 0, 3, 2, 5, 4, 7, 6 2, 3, 0, 1, 6, 7, 4, 5 3, 2, 1, 0, 7, 6, 5, 4 1, 0 0, 1, 2, 3 1, 2, 3, 0 1, 0 0, 1, 2, 3 1, 0, 3, 2 Starting Length (A2, A1, A0) xx0 Sequential Mode 0, 1 Interleave Mode 0, 1 V58C2128(804/404/164)S Rev. 1.6 March 2002 8 V58C2128(804/404/164)S The Bank Activate command is issued by holding CAS and WE high with CS and RAS low at the rising edge of the clock. The DDR SDRAM has four independent banks, so two Bank Select addresses (BA0 and BA1) are supported. The Bank Activate command must be applied before any Read or Write operation can be executed. The delay from the Bank Activate command to the first Read or Write command must meet or exceed the minimum RAS to CAS delay time (tRCD min). Once a bank has been activated, it must be precharged before another Bank Activate command can be applied to the same bank. The minimum time interval between interleaved Bank Activate commands (Bank A to Bank B and vice versa) is the Bank to Bank delay time (tRRD min). With the DLL enabled, all devices operating at the same frequency within a system are ensured to have the same timing relationship between DQ and DQS relative to the CK input regardless of device density, process variation, or technology generation. The data strobe signal (DQS) is driven off chip simultaneously with the output data (DQ) during each read cycle. The same internal clock phase is used to drive both the output data and data strobe signal off chip to minimize skew between data strobe and output data. This internal clock phase is nominally aligned to the input differential clock (CK, CK) by the on-chip DLL. Therefore, when the DLL is enabled and the clock frequency is within the specified range for proper DLL operation, the data strobe (DQS), output data (DQ), and the system clock (CK) are all nominally aligned. Since the data strobe and output data are tightly coupled in the system, the data strobe signal may be delayed and used to latch the output data into the receiving device. The tolerance for skew between DQS and DQ (tDQSQ) is tighter than that possible for CK to DQ (tAC) or DQS to CK (tDQSCK). CILETIV LESO M Bank Activate Command Bank Activation Timing (CAS Latency = 2; Burst Length = Any) T0 T1 T2 tRAS(min) tRCD(min) CK, CK BA/Address Command Bank/Row Activate/A Bank/Col Read/A Bank Pre/A Bank/Row Activate/A Bank/Row Activate/B T3 Tn tRC Tn+1 Tn+2 tRP(min) Tn+3 Tn+4 tRRD(min) Tn+5 Begin Precharge Bank A Read Operation V58C2128(804/404/164)S Rev. 1.6 March 2002 9 V58C2128(804/404/164)S The minimum time during which the output data (DQ) is valid is critical for the receiving device (i.e., a memory controller device). This also applies to the data strobe during the read cycle since it is tightly coupled to the output data. The minimum data output valid time (tDV) and minimum data strobe valid time (tDQSV) are derived from the minimum clock high/low time minus a margin for variation in data access and hold time due to DLL jitter and power supply noise. CILETIV LESO M Output Data (DQ) and Data Strobe (DQS) Timing Relative to the Clock (CK) During Read Cycles (CAS Latency = 2.5; Burst Length = 4) T0 T1 T2 T3 T4 CK, CK Command READ NOP NOP NOP NOP tDQSCK(max) tDQSCK(min) DQS tAC(min) tAC(max) DQ D0 D1 D2 D3 V58C2128(804/404/164)S Rev. 1.6 March 2002 10 V58C2128(804/404/164)S Prior to a burst of read data and given that the controller is not currently in burst read mode, the data strobe signal (DQS), must transition from Hi-Z to a valid logic low. The is referred to as the data strobe "read preamble" (tRPRE). This transition from Hi-Z to logic low nominally happens one clock cycle prior to the first edge of valid data. Once the burst of read data is concluded and given that no subsequent burst read operations are initiated, the data strobe signal (DQS) transitions from a logic low level back to Hi-Z. This is referred to as the data strobe "read postamble" (tRPST). This transition happens nominally one-half clock period after the last edge of valid data. Consecutive or "gapless" burst read operations are possible from the same DDR SDRAM device with no requirement for a data strobe "read" preamble or postamble in between the groups of burst data. The data strobe read preamble is required before the DDR device drives the first output data off chip. Similarly, the data strobe postamble is initiated when the device stops driving DQ data at the termination of read burst cycles. CILETIV LESO M Output Data and Data Strobe Valid Window for DDR Read Cycles (CAS Latency = 2; Burst Length = 2) T0 T1 T2 T3 T4 CK, CK Command READ NOP NOP NOP DQS tDQSV(min) DQ D0 D1 tDV(min) Read Preamble and Postamble Operation V58C2128(804/404/164)S Rev. 1.6 March 2002 11 V58C2128(804/404/164)S CILETIV LESO M Data Strobe Preamble and Postamble Timings for DDR Read Cycles (CAS Latency = 2; Burst Length = 2) T0 T1 T2 T3 T4 CK, CK Command READ NOP NOP tRPRE(max) NOP tRPRE(min) DQS tDQSQ(min) tRPST(min) tRPST(max) DQ D0 D1 tDQSQ(max) Consecutive Burst Read Operation and Effects on the Data Strobe Preamble and Postamble Burst Read Operation (CAS Latency = 2; Burst Length = 4) CK, CK Command DQS DQ D0A D1A D2A D3A D0B D1B D2B D3B ReadA NOP ReadB NOP NOP NOP NOP NOP NOP Burst Read Operation (CAS Latency = 2; Burst Length = 4) CK, CK Command DQS DQ D0A D1A D2A D3A D0B D1B D2B D3B ReadA NOP NOP ReadB NOP NOP NOP NOP NOP V58C2128(804/404/164)S Rev. 1.6 March 2002 12 V58C2128(804/404/164)S The Auto Precharge operation can be issued by having column address A10 high when a Read or Write command is issued. If A10 is low when a Read or Write command is issued, then normal Read or Write burst operation is executed and the bank remains active at the completion of the burst sequence. When the Auto Precharge command is activated, the active bank automatically begins to precharge at the earliest possible moment during the Read or Write cycle once tRAS(min) is satisfied. Read with Auto Precharge If a Read with Auto Precharge command is initiated, the DDR SDRAM will enter the precharge operation N-clock cycles measured from the last data of the burst read cycle where N is equal to the CAS latency programmed into the device. Once the autoprecharge operation has begun, the bank cannot be reactivated until the minimum precharge time (tRP) has been satisfied. CILETIV LESO M Auto Precharge Operation Read with Autoprecharge Timing (CAS Latency = 2; Burst Length = 4) T0 T1 T2 T3 tRAS(min) CK, CK Command DQS DQ D0 D1 D2 D3 ACT NOP R w/AP NOP NOP NOP NOP BA NOP T4 T5 T6 tP (min) T7 T8 T9 Begin Autoprecharge Earliest Bank A reactivate V58C2128(804/404/164)S Rev. 1.6 March 2002 13 V58C2128(804/404/164)S CILETIV LESO M Read with Autoprecharge Timing as a Function of CAS Latency (CAS Latency = 2, 2.5, Burst Length = 4) T0 T1 T2 T3 T4 T5 T6 tRP(min) T7 T8 T9 tRAS(min) CK, CK Command BA NOP NOP RAP NOP NOP NOP BA NOP NOP DQS DQ D0 D1 D2 D3 CAS Latency=2 DQS DQ D0 D1 D2 D3 CAS Latency=2.5 V58C2128(804/404/164)S Rev. 1.6 March 2002 14 V58C2128(804/404/164)S Precharge Timing During Read Operation For the earliest possible Precharge command without interrupting a Read burst, the Precharge command may be issued on the rising clock edge which is CAS latency (CL) clock cycles before the end of the Read burst. A new Bank Activate (BA) command may be issued to the same bank after the RAS precharge time (tRP). A Precharge command can not be issued until tRAS(min) is satisfied. CILETIV LESO M Read with Precharge Timing as a Function of CAS Latency (CAS Latency = 2, 2.5, 3; Burst Length = 4) T0 T1 T2 T3 T4 T5 T6 tRP(min) T7 T8 T9 tRAS(min) CK, CK Command BA NOP NOP Read NOP PreA NOP BA NOP NOP DQS DQ D0 D1 D2 D3 CAS Latency=2 DQS DQ D0 D1 D2 D3 CAS Latency=2.5 V58C2128(804/404/164)S Rev. 1.6 March 2002 15 V58C2128(804/404/164)S The Burst Stop command is valid only during burst read cycles and is initiated by having RAS and CAS high with CS and WE low at the rising edge of the clock. When the Burst Stop command is issued during a burst Read cycle, both the output data (DQ) and data strobe (DQS) go to a high impedance state after a delay (LBST) equal to the CAS latency programmed into the device. If the Burst Stop command is issued during a burst Write cycle, the command will be treated as a NOP command. CILETIV LESO M Burst Stop Command Read Terminated by Burst Stop Command Timing (CAS Latency = 2, 2.5, 3; Burst Length = 4) T0 CK, CK Command Read LBST DQS CAS Latency = 2 DQ LBST DQS CAS Latency = 2.5 DQ LBST D0 D1 D0 D1 BST NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 V58C2128(804/404/164)S Rev. 1.6 March 2002 16 V58C2128(804/404/164)S Burst Write Operation The Burst Write command is issued by having CS, CAS, and WE low while holding RAS high at the rising edge of the clock. The address inputs determine the starting column address. The memory controller is required to provide an input data strobe (DQS) to the DDR SDRAM to strobe or latch the input data (DQ) and data mask (DM) into the device. During Write cycles, the data strobe applied to the DDR SDRAM is required to be nominally centered within the data (DQ) and data mask (DM) valid windows. The data strobe must be driven high nominally one clock after the write command has been registered. Timing parameters tDQSS(min) and tDQSS(max) define the allowable window when the data strobe must be driven high. Input data for the first Burst Write cycle must be applied one clock cycle after the Write command is registered into the device (WL=1). The input data valid window is nominally centered around the midpoint of the data strobe signal. The data window is defined by DQ to DQS setup time (tQDQSS) and DQ to DQS hold time (tQDQSH). All data inputs must be supplied on each rising and falling edge of the data strobe until the burst length is completed. When the burst has finished, any additional data supplied to the DQ pins will be ignored. Write Preamble and Postamble Operation Prior to a burst of write data and given that the controller is not currently in burst write mode, the data strobe signal (DQS), must transition from Hi-Z to a valid logic low. This is referred to as the data strobe "write preamble". This transition from Hi-Z to logic low nominally happens on the falling edge of the clock after the write command has been registered by the device. The preamble is explicitly defined by a setup time (tWPRES(min)) and hold time (tWPREH(min)) referenced to the first falling edge of CK after the write command. CILETIV LESO M Read Interrupted by a Precharge A Burst Read operation can be interrupted by a precharge of the same bank. The Precharge command to Output Disable latency is equivalent to the CAS latency. Read Interrupted by a Precharge Timing (CAS Latency = 2, 2.5, 3; Burst Length = 8) T0 T1 T2 T3 T4 T5 T6 tRP(min) T7 T8 T9 tRAS(min) CK, CK Command BA NOP NOP Read NOP PreA NOP BA NOP NOP DQS DQ D0 D1 D2 D3 CAS Latency=2 DQS DQ D0 D1 D2 D3 CAS Latency=2.5 V58C2128(804/404/164)S Rev. 1.6 March 2002 17 V58C2128(804/404/164)S Burst Write Timing (CAS Latency = Any; Burst Length = 4) Once the burst of write data is concluded and given that no subsequent burst write operations are initiated, the data strobe signal (DQS) transitions from a logic low level back to Hi-Z. This is referred to as the data strobe "write postamble". This transition happens nominally one-half clock period after the last data of the burst cycle is latched into the device. CILETIV LESO M T0 T1 T2 T3 T4 CK, CK Command WRITE tWPREH tWPRES NOP NOP NOP tWPST tQDQSS DQS(nom) tDQSS tQDQSH tQDQSS tQDQSH DQ(nom) D0 D1 D2 D3 tWPREH(min) tWPRES(min) DQS(min) tDQSS(min) DQ(min) D0 D1 D2 D3 tWPRES(max) tWPREH(max) DQS(max) tDQSS(max) DQ(max) D0 D1 D2 D3 V58C2128(804/404/164)S Rev. 1.6 March 2002 18 V58C2128(804/404/164)S CILETIV LESO M Write Interrupted by a Precharge A Burst Write can be interrupted before completion of the burst by a Precharge command, with the only restriction being that the interval that separates the commands be at least one clock cycle. Write Interrupted by a Precharge Timing (CAS Latency = 2; Burst Length = 8) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 CK, CK Command DQS DQ DM D0 D1 D2 D3 D4 D5 D6 WriteA NOP NOP PreA NOP tWR NOP NOP NOP NOP NOP NOP Data is masked by DM input Data is masked by Precharge Command DQS input ignored Write with Auto Precharge If A10 is high when a Write command is issued, the Write with auto Precharge function is performed. Any new command to the same bank should not be issued until the internal precharge is completed. The internal precharge begins after keeping tWR (min.). Write with Auto Precharge Timing (CAS Latency = Any; Burst Length = 4) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 tRAS(min) CK, CK Command BA NOP NOP WAP NOP NOP NOP NOP NOP NOP BA DQS tWR(min) DQ D0 D1 D2 D3 tRP(min) Begin Autoprecharge V58C2128(804/404/164)S Rev. 1.6 March 2002 19 V58C2128(804/404/164)S Precharge timing for Write operations in DRAMs requires enough time to satisfy the write recovery requirement. This is the time required by a DRAM sense amp to fully store the voltage level. For DDR SDRAMs, a timing parameter (tWR) is used to indicate the required amount of time between the last valid write operation and a Precharge command to the same bank. The "write recovery" operation begins on the rising clock edge after the last DQS edge that is used to strobe in the last valid write data. "Write recovery" is complete on the 2nd next rising clock edge that is used to strobe in the Precharge command. CILETIV LESO M Precharge Timing During Write Operation Write with Precharge Timing (CAS Latency = Any; Burst Length = 4) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 tRP(min) T10 tRAS(min) CK, CK Command BA NOP NOP Write NOP NOP NOP NOP tWR DQS DQ D0 D1 D2 D3 tWR DQS DQ D0 D1 D2 D3 PreA NOP BA V58C2128(804/404/164)S Rev. 1.6 March 2002 20 V58C2128(804/404/164)S Read Interrupted by a Read A Burst Read can be interrupted before completion of the burst by issuing a new Read command to any bank. When the previous burst is interrupted, the remaining addresses are overridden with a full burst length starting with the new address. The data from the first Read command continues to appear on the outputs until the CAS latency from the interrupting Read command is satisfied. At this point, the data from the interrupting Read command appears on the bus. Read commands can be issued on each rising edge of the system clock. It is illegal to interrupt a Read with autoprecharge command with a Read command. CILETIV LESO M Data Mask Function The DDR SDRAM has a Data Mask function that is used in conjunction with the Write cycle, but not the Read cycle. When the Data Mask is activated (DM high) during a Write operation, the Write is blocked (Mask to Data Latency = 0). When issued, the Data Mask must be referenced to both the rising and falling edges of Data Strobe. Data Mask Timing (CAS Latency = Any; Burst Length = 8) T0 CK, CK Command Write tDMDQSS DQS tDMDQSH DQ D0 D1 D2 D3 D4 D5 D6 D7 tDMDQSH NOP NOP NOP NOP NOP tDMDQSS NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 DM Burst Interruption Read Interrupted by a Read Command Timing (CAS Latency = 2; Burst Length = 4) T0 CK, CK Command DQS DQ DA0 DA1 DB0 DB1 DB2 DB3 ReadA ReadB NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 V58C2128(804/404/164)S Rev. 1.6 March 2002 21 V58C2128(804/404/164)S CILETIV LESO M Read Interrupted by a Write To interrupt a Burst Read with a Write command, a Burst Stop command must be asserted to stop the burst read operation and 3-state the DQ bus. Additionally, control of the DQS bus must be turned around to allow the memory controller to drive the data strobe signal (DQS) into the DDR SDRAM for the write cycles. Once the Burst Stop command has been issued, a Write command can not be issued until a minimum delay or latency (LBST) has been satisfied. This latency is measured from the Burst Stop command and is equivalent to the CAS latency programmed into the mode register. In instances where CAS latency is measured in half clock cycles, the minimum delay (LBST) is rounded up to the next full clock cycle (i.e., if CL=2 then L BST=2, if CL=2.5 then LBST=3). It is illegal to interrupt a Read with autoprecharge command with a Write command. Read Interrupted by Burst Stop Command Followed by a Write Command Timing (CAS Latency = 2; Burst Length = 4) T0 CK, CK Command DQS DQ D0 LBST D1 D0 D1 D2 D3 Read BST NOP Write NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 Write Interrupted by a Write A Burst Write can be interrupted before completion by a new Write command to any bank. When the previous burst is interrupted, the remaining addresses are overridden with a full burst length starting with the new address. The data from the first Write command continues to be input into the device until the Write Latency of the interrupting Write command is satisfied (WL=1) At this point, the data from the interrupting Write command is input into the device. Write commands can be issued on each rising edge of the system clock. It is illegal to interrupt a Write with autoprecharge command with a Write command. Write Interrupted by a Write Command Timing (CAS Latency = Any; Burst Length = 4) T0 CK, CK Command DQS DQ DM DA0 DA1 DB0 DB1 DB2 DB3 DM0 DM1 DM0 DM1 DM2 DM3 Write Latency WriteA WriteB NOP NOP NOP NOP NOP NOP T1 T2 T3 T4 T5 T6 T7 T8 T9 V58C2128(804/404/164)S Rev. 1.6 March 2002 22 V58C2128(804/404/164)S Write Interrupted by a Read A Burst Write can be interrupted by a Read command to any bank. If a burst write operation is interrupted prior to the end of the burst operation, then the last two pieces of input data prior to the Read command must be masked off with the data mask (DM) input pin to prevent invalid data from being written into the memory array. Any data that is present on the DQ pins coincident with or following the Read command will be masked off by the Read command and will not be written to the array. The memory controller must give up control of both the DQ bus and the DQS bus at least one clock cycle before the read data appears on the outputs in order to avoid contention. In order to avoid data contention within the device, a delay is required (tCDLR) from the last valid data input before a Read command can be issued to the device. It is illegal to interrupt a Write with autoprecharge command with a Read command. Auto Refresh The Auto Refresh command is issued by having CS, RAS, and CAS held low with CKE and WE high at the rising edge of the clock. All banks must be precharged and idle for a tRP(min) before the Auto Refresh command is applied. No control of the address pins is required once this cycle has started because of the internal address counter. When the Auto Refresh cycle has completed, all banks will be in the idle state. A delay between the Auto Refresh command and the next Activate command or subsequent Auto Refresh command must be greater than or equal to the tRFC(min). Commands may not be issued to the device once an Auto Refresh cycle has begun. CS input must remain high during the refresh period or NOP commands must be registered on each rising edge of the CK input until the refresh period is satisfied. CILETIV LESO M Write Interrupted by a Read Command Timing (CAS Latency = 2; Burst Length = 8) T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 T10 T11 T12 CK, CK Command DQS DQ DM D0 D1 D2 D3 D4 D5 D0 D1 D2 D3 D4 D5 D 6 D7 Write NOP tWTR NOP Read NOP NOP NOP NOP NOP NOP NOP Data is masked by DM input Data is masked by Read command DQS input ignored Auto Refresh Timing T0 T1 T2 tRP T3 T4 T5 T6 T7 tRFC T8 T9 T10 T11 CK, CK Command Pre All Auto Ref NOP NOP NOP ANY CKE High V58C2128(804/404/164)S Rev. 1.6 March 2002 23 V58C2128(804/404/164)S The power down mode is entered when CKE is low and exited when CKE is high. Once the power down mode is initiated, all of the receiver circuits except clock, CKE and DLL circuit are gated off to reduce power consumption. All banks should be in idle state prior to entering the precharge power down mode and CKE should be set high at least 1tck+tIS prior to row active command. During power down mode, refresh operations cannot be performed, therefore the device cannot remain in power down mode longer than the refresh period (tREF) of the device. CILETIV LESO M Self Refresh A self refresh command is defined by having CS, RAS, CAS and CKE held low with WE high at the rising edge of the clock (CK). Once the self refresh command is initiated, CKE must be held low to keep the device in self refresh mode. During the self refresh operation, all inputs except CKE are ignored. The clock is internally disabled during self refresh operation to reduce power consumption. The self refresh is exited by supplying stable clock input before returning CKE high, asserting deselect or NOP command and then asserting CKE high for longer than tSREX for locking of DLL. The auto refresh is required before self refresh entry and after self refresh exit. CK, CK Command CKE Self Refresh ** ** ** Stable Clock NOP ** ** ** Auto Refresh ** tSREX Power Down Mode CK, CK ** ** Command Precharge Precharge power down Entry precharge ** power down Exit Active ** NOP Read CKE ** ** Active power down Entry Active power down Exit V58C2128(804/404/164)S Rev. 1.6 March 2002 24 V58C2128(804/404/164)S QFC function when driven low on reads coincident with the start of preamble, this DRAM output signal says that one cycle later there will be the first valid DQS output and returned to HI-Z after this finishing a burst operation. It is also driven low shortly after a write command is received and returned to HI-Z shortly after the last data strobe transition is received. Whenever the device is in standby, the signal is HI-Z. DQS is intended to enable an external data switch. QFC can be enabled or disabled through EMRS control. QFC timing on Read operation QFC on reads is enabled coincident with the start of DQS preamble, and disabled coincident with the end of DQS postamble CL = 2, BL = 2 CILETIV LESO M QFC function 0 CK CK Command DQS DQ' S QFC 1 2 3 4 5 6 7 8 Read Dout 0 Dout 1 Hi-Z tQPRE tQPST Figure 26. QFC timing on read operation V58C2128(804/404/164)S Rev. 1.6 March 2002 25 V58C2128(804/404/164)S QFC timing on Write operation QFC on writes is enabled as soon as possible after the clock edge of write command and disabled as soon as possible after the last DQS-in low going edge. 0 CK CK Command Write CILETIV LESO M 1 2 3 4 5 6 7 BL=2 8 DQS@tDQSSmax DQ' @tDQSSmax S QFC Hi-Z tQCK Dout0 Dout1 *2 tQOHmax. *1tQOHmin. Figure 27. : QFC timing on write operation with tDQSSmax BL=2 CK CK Command 0 1 2 3 4 5 6 7 8 Write DQS@tDQSSmin DQ' @tDQSSmin S QFC Hi-Z tQCK Dout0 Dout1 *1 tQOHmin. *2 tQOHmax. Figure 28. : QFC timing on write operation with tDQSSmin 1. The value of tQCK min. is 1.25ns from the last low going data strobe edge to QFC HI-Z. 2. The value of tQCK max. is 0.5tcK from the first high going clock edge after the last low going data strobe edge to QFC HI-Z. V58C2128(804/404/164)S Rev. 1.6 March 2002 26 V58C2128(804/404/164)S CILETIV LESO M TRUTH TABLE 2 - CKE (Notes: 1-4) CKEn-1 CKEn CURRENT STATE Power-Down L L Self Refresh COMMANDn X X ACTIONn Maintain Power-Down Maintain Self Refresh NOTES Power-Down L H Self Refresh DESELECT or NOP DESELECT or NOP Exit Power-Down Exit Self Refresh 5 All Banks Idle H L Bank(s) Active All Banks Idle H H DESELECT or NOP DESELECT or NOP AUTO REFRESH See Truth Table 3 Precharge Power-Down Entry Active Power-Down Entry Self Refresh Entry NOTE: 1. CKEn is the logic state of CKE at clock edge n; CKEn-1 was the state of CKE at the previous clock edge. 2. Current state is the state of the DDR SDRAM immediately prior to clock edge n. 3. COMMANDn is the command registered at clock edge n, and ACTIONn is a result of COMMANDn. 4. All states and sequences not shown are illegal or reserved. 5. DESELECT or NOP commands should be issued on any clock edges occurring during the tXSR period. A minimum of 200 clock cycles is needed before applying a read command, for the DLL to lock. V58C2128(804/404/164)S Rev. 1.6 March 2002 27 V58C2128(804/404/164)S 4. The following states must not be interrupted by a command issued to the same bank. DESELECT or NOP commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states. Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to Truth Table 4. Precharging: Starts with registration of a PRECHARGE command and ends when tRP is met. Once tRP is met, the bank will be in the idle state. CILETIV LESO M TRUTH TABLE 3 - Current State Bank n - Command to Bank n (Notes: 1-6; notes appear below and on next page) CURRENT STATE Any /CS H L L /RAS X H L L L H H L H L H H H L /CAS X H H L L L L H L H H L L H /WE X H H H L H L L H L L H L L COMMAND/ACTION DESELECT (NOP/continue previous operation) NO OPERATION (NOP/continue previous operation) ACTIVE (select and activate row) AUTO REFRESH MODE REGISTER SET READ (select column and start READ burst) WRITE (select column and start WRITE burst) PRECHARGE (deactivate row in bank or banks) READ (select column and start new READ burst) PRECHARGE (truncate READ burst, start PRECHARGE) BURST TERMINATE READ (select column and start READ burst) WRITE (select column and start new WRITE burst) PRECHARGE (truncate WRITE burst, start PRECHARGE) NOTES Idle L L L 7 7 10 10 8 10 8 9 10, 11 10 8, 11 Row Active L L L Read (Auto Precharge Disabled) L L L Write (Auto Precharge Disabled) L L NOTE: 1. This table applies when CKE n-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous state was self refresh). 2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and has not yet terminated or been terminated. V58C2128(804/404/164)S Rev. 1.6 March 2002 28 V58C2128(804/404/164)S CILETIV LESO M NOTE: (continued) Row Activating: Starts with registration of an ACTIVE command and ends when tRCD is met. Once tRCD is met, the bank will be in the "row active" state. Read w/Auto-Precharge Enabled: Starts with registration of a READ command with AUTO PRECHARGE enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. Write w/Auto-Precharge Enabled: Starts with registration of a WRITE command with AUTO PRECHARGE enabled and ends when tRP has been met. Once tRP is met, the bank will be in the idle state. 5. The following states must not be interrupted by any executable command; DESELECT or NOP commands must be applied on each positive clock edge during these states. Refreshing: Starts with registration of an AUTO REFRESH command and ends when tRC is met. Once tRFC is met, the DDR SDRAM will be in the "all banks idle" state. Accessing Mode Register: Starts with registration of a MODE REGISTER SET command and ends when tMRD has been met. Once tMTC is met, the DDR SDRAM will be in the "all banks idle" state. Precharging All: Starts with registration of a PRECHARGE ALL command and ends when tRP is met. Once tRP is met, all banks will be in the idle state. 6. All states and sequences not shown are illegal or reserved. 7. Not bank-specific; requires that all banks are idle and no bursts are in progress. 8. May or may not be bank-specific; if multiple banks are to be precharged, each must be in a valid state for precharging. 9. Not bank-specific; BURST TERMINATE affects the most recent READ burst, regardless of bank. 10. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO PRECHARGE enabled and READs or WRITEs with AUTO PRECHARGE disabled. 11. Requires appropriate DM masking. V58C2128(804/404/164)S Rev. 1.6 March 2002 29 V58C2128(804/404/164)S CILETIV LESO M TRUTH TABLE 4 - Current State Bank n - Command to Bank m (Notes: 1-6; notes appear below and on next page) CURRENT STATE Any /CS H L /RAS /CAS X H X L H H L L H L L H H L L H H L L H H L X H X H L L H H L H H L L H H L L H H L L H /WE X H X H H L L H H L H H L L H H L L H H L L COMMAND/ACTION DESELECT (NOP/continue previous operation) NO OPERATION (NOP/continue previous operation) Any Command Otherwise Allowed to Bank m ACTIVE (select and activate row) READ (select column and start READ burst) WRITE (select column and start WRITE burst) PRECHARGE ACTIVE (select and activate row) READ (select column and start new READ burst) PRECHARGE ACTIVE (select and activate row) READ (select column and start READ burst) WRITE (select column and start new WRITE burst) PRECHARGE ACTIVE (select and activate row) READ (select column and start new READ burst) WRITE (select column and start WRITE burst) PRECHARGE ACTIVE (select and activate row) READ (select column and start READ burst) WRITE (select column and start new WRITE burst) PRECHARGE NOTES Idle X L Row Activating, Active, or Precharging L L L 7 7 Read (Auto-Precharge Disabled) L L L L 7 Write (Auto- Precharge Disabled) L L L L 7, 8 7 Read (With Auto-Precharge) L L L L 3a, 7 3a, 7, 9 Write (With Auto-Precharge) L L L 3a, 7 3a, 7 NOTE: 1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after tXSR has been met (if the previous state was self refresh). 2. This table describes alternate bank operation, except where noted, i.e., the current state is for bank n and the commands shown are those allowed to be issued to bank m (assuming that bank m is in such a state that the given command is allowable). Exceptions are covered in the notes below. 3. Current state definitions: Idle: The bank has been precharged, and tRP has been met. Row Active: A row in the bank has been activated, and tRCD has been met. No data bursts/accesses and no register accesses are in progress. Read: A READ burst has been initiated, with AUTO PRECHARGE disabled, and has not yet terminated or been terminated. Write: A WRITE burst has been initiated, with AUTO PRECHARGE disabled, and has not yet terminated or been terminated. V58C2128(804/404/164)S Rev. 1.6 March 2002 30 V58C2128(804/404/164)S CILETIV LESO M NOTE: (continued) Read with Auto Precharge Enabled: See following text Write with Auto Precharge Enabled: See following text 3a. The Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states can each be broken into two parts: the access period and the precharge period. For Read with Auto Precharge, the precharge period is defined as if the same burst was executed with Auto Precharge disabled and then followed with the earliest possible PRECHARGE command that still accesses all of the data in the burst. For Write with Auto Precharge, the precharge period begins when tWR ends, with tWR measured as if Auto Precharge was disabled. The access period starts with registration of the command and ends where the precharge period (or tRP) begins. During the precharge period of the Read with Auto Precharge Enabled or Write with Auto Precharge Enabled states, ACTIVE, PRECHARGE, READ and WRITE commands to the other bank may be applied; during the access period, only ACTIVE and PRECHARGE commands to the other bank may be applied. In either case, all other related limitations apply (e.g. contention between READ data and WRITE data must be avoided). 4. AUTO REFRESH and MODE REGISTER SET commands may only be issued when all banks are idle. 5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank represented by the current state only. 6. All states and sequences not shown are illegal or reserved. 7. READs or WRITEs listed in the Command/Action column include READs or WRITEs with AUTO PRECHARGE enabled and READs or WRITEs with AUTO PRECHARGE disabled. 8. Requires appropriate DM masking. 9. A WRITE command may be applied after the completion of data output. V58C2128(804/404/164)S Rev. 1.6 March 2002 31 V58C2128(804/404/164)S CILETIV LESO M Simplified State Diagram Power Applied Power On Precharge PREALL REFS REFSX MRS EMRS MRS REFA Auto Refresh Self Refresh Idle CKEL CKEH Active Power Down ACT Precharge Power Down CKEH CKEL Write Write Write A Write Row Active Burst Stop Read Read Read A Read Read Write A Read A Write A PRE PRE PRE Read A Read A Precharge PRE PREALL Automatic Sequence Command Sequence PREALL = Precharge All Banks MRS = Mode Register Set EMRS = Extended Mode Register Set REFS = Enter Self Refresh REFSX = Exit Self Refresh REFA = Auto Refresh CKEL = Enter Power Down CKEH = Exit Power Down ACT = Active Write A = Write with Autoprecharge Read A = Read with Autoprecharge PRE = Precharge V58C2128(804/404/164)S Rev. 1.6 March 2002 32 V58C2128(804/404/164)S CILETIV LESO M DC Operating Conditions & Specifications DC Operating Conditions Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70C) Parameter Supply voltage (for device with a nominal VDD of 2.5V) I/O Supply voltage I/O Reference voltage I/O Termination voltage(system) Input logic high voltage Input logic low voltage Input Voltage Level, CK and CK inputs Input Differential Voltage, CK and CK inputs Input leakage current Output leakage current Output High Current (VOUT = 1.95V) Output Low Current (VOUT = 0.35V) Symbol VDD VDDQ VREF VTT VIH(DC) V IL(DC) VIN(DC) VID(DC) II IOZ IOH IOL Min 2.3 2.3 0.49*VDDQ VREF -0.04 VREF +0.15 -0.3 -0.3 0.3 -2 -5 -16.8 16.8 Max 2.7 2.7 0.51*VDDQ VREF+0.04 VDDQ+0.3 VREF-0.15 VDDQ+0.3 VDDQ+0.6 2 5 Unit Note V V V V V V V uA uA mA mA 3 1 2 Notes: 1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the DC level of the same. Peakto-peak noise on VREF may not exceed 2% of the DC value 2.VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track variations in the DC level of VREF 3. VID is the magnitude of the difference between the input level on CK and the input level on CK. Table 11. DC operating condition V58C2128(804/404/164)S Rev. 1.6 March 2002 33 V58C2128(804/404/164)S CILETIV LESO M IDD Specifications and Conditions (0C < TA < 70C, VDDQ=25V+ 0.2V, VDD=2.5 Ia2V) Version Conditions Symbol Operating current - One bank Active-Precharge; tRC=tRCmin;tCK=100Mhz for DDR200, 133Mhz for DDR266A & DDR266B, 166Mhz for DDR333B; DQ,DM and DQS inputs changing twice per clock cycle; address and control inputs changing once per clock cycle Operating current - One bank operation; One bank open, BL=4 IDD0 -6 115 -7 100 -7.5 95 -8 85 IDD1 165 27 150 25 150 25 135 23 Percharge power-down standby current; All banks idle; power - down mode; CKE = IDD2F 50 45 45 40 Precharge Quiet standby current; CS# > = VIH(min); All banks idle; CKE > = VIH(min); tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B; Address and other control inputs stable IDD2Q with keeping >= VIH(min) or = 35 35 32 IDD3P 35 30 30 25 Active standby current; CS# >= VIH(min); CKE>=VIH(min); one bank active; active - precharge; tRC=tRASmax; tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B, 166Mhz IDD3N for DDR333B; DQ, DQS and DM inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control inputs changing once per clock cycle; CL=2 at tCK = 100Mhz for DDR200, CL=2 at tCK = 133Mhz for DDR266A, CL=2.5 at tCK = 133Mhz for DDR266B, CL=2.5 at tCK=166Mhz for DDR333B; 50% of data changing at every burst; lout = 0 m A 50 45 45 35 IDD4R 180 160 160 140 Operating current - burst write; Burst length = 2; writes; continuous burst; One bank active address and control inputs changing once per clock cycle; CL=2 at tCK = 100Mhz for DDR200, CL=2 IDD4W at tCK = 133Mhz for DDR266A, CL=2.5 at tCK = 133Mhz for DDR266B ; DQ, DM and DQS inputs changing twice per clock cycle, 50% of input data changing at every burst Auto refresh current; tRC = tRFC(min) - 8*tCK for DDR200 at 100Mhz, 10*tCK for DDR266A & DDR266B at 133Mhz, 12*tCK for DDR333B; distributed refresh Self refresh current; CKE =< 0.2V; External clock should be on; tCK = 100Mhz for DDR200, 133Mhz for DDR266A & DDR266B, 166Mhz for DDR333B. Operating current - Four bank operation; Four bank interleaving with BL=4 IDD5 180 150 150 120 210 200 200 190 IDD6 IDD7 2 285 2 280 2 280 2 275 V58C2128(804/404/164)S Rev. 1.6 March 2002 34 V58C2128(804/404/164)S Note: 1.Vih(max) = 4.2V. The overshoot voltage duration is < 3ns at VDD. 2. Vil(min) = -1.5V. The undershoot voltage duration is < 3ns at VSS. 3. VID is the magnitude of the difference between the input level on CK and the input on CK. 4. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same. CILETIV LESO M AC Operating Conditions & Timming Specification AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK inputs Input Crossing Point Voltage, CK and CK inputs Symbol VIH(AC) VIL(AC) VID(AC) VIX(AC) Min VREF + 0.31 Max Unit V Note 1 2 3 4 VREF - 0.31 0.62 0.5*VDDQ-0.2 VDDQ+0.6 0.5*VDDQ+0.2 V V V ELECTRICAL CHARACTERISTICS AND AC TIMING for PC333/PC266/PC200 -Absolute Specifications (Notes: 1-5, 14-17) (0C < T A < 70C; VDDQ = +2.5V 0.2V, +2.5V 0.2V) AC CHARACTERISTICS PARAMETER Access window of DQs from CK/CK CK high-level width CK low-level width Clock cycle time CL = 2.5 CL = 2 DQ and DM input hold time relative to DQS DQ and DM input setup time relative to DQS DQ and DM input pulse width (for each input) Access window of DQS from CK/CK DQS input high pulse width DQS input low pulse width DQS-DQ skew, DQS to last DQ valid, per group, per access Write command to first DQS latching transition DQS falling edge to CK rising - setup time DQS falling edge from CK rising - hold time Half clock period -6 SYMBOL t t -7 MAX 0.7 0.55 0.55 12 12 -75 MAX 0.75 0.55 0.55 12 12 -8 MIN -0.7 0.45 0.45 6 7.5 0.45 MIN -0.75 0.45 0.45 7 7.5 0.5 MIN -0.75 0.45 0.45 7.5 10 0.5 MAX MIN MAX UNITS NOTES 0.75 0.55 0.55 12 12 -0.8 0.45 0.45 8 10 0.6 0.8 0.55 0.55 12 12 t t AC ns CK CK ns ns ns 30 30 52 52 26,31 CH CL (2.5) (2) t tCK tCK tDH t DS 0.45 0.5 0.5 0.6 ns 26,31 tDIPW tDQSCK tDQSH t 1.5 -0.6 0.35 0.35 0.45 0.6 1.75 -0.75 0.35 0.35 0.5 0.75 1.75 -0.75 0.35 0.35 0.5 0.75 2 -0.8 0.35 0.35 0.6 0.8 ns ns tCK t 31 DQSL CK ns 25,26 tDQSQ tDQSS tDSS t 0.75 0.2 0.2 tCH, tCL 1.25 0.75 0.2 0.2 tCH, tCL 1.25 0.75 0.2 0.2 tCH, tCL 1.25 0.75 0.2 0.2 tCH, tCL 1.25 tCK tCK t DSH tHP CK ns 34 V58C2128(804/404/164)S Rev. 1.6 March 2002 35 V58C2128(804/404/164)S -6 SYMBOL tHZ CILETIV LESO M AC CHARACTERISTICS PARAMETER Data-out high-impedance window from CK/CK Data-out low-impedance window from CK/ CK Address and control input hold time (fast slew rate) Address and control input setup time (fast slew rate) Address and control input hold time (slow slew rate) Address and control input setup time (slow slew rate) LOAD MODE REGISTER command cycle time DQ-DQS hold, DQS to first DQ to go nonvalid, per access Data hold skew factor ACTIVE to PRECHARGE command t -7 MAX +0.7 -75 MAX +0.75 -8 MIN -0.7 MIN -0.75 MIN -0.75 MAX MIN MAX UNITS NOTES +0.75 -0.8 +0.8 ns 18 tLZ -0.7 +0.7 -0.75 +0.75 -0.75 +0.75 -0.8 +0.8 ns 18 t IH F .75 .90 .90 1.1 ns 14 tIS F .75 .90 .90 1.1 ns 14 tIH S 0.80 1 1 1.1 ns 14 t ISS 0.80 1 1 1.1 ns tCK 14 tMRD 2 tHP -tQHS 2 tHP -tQHS 2 tHP -tQHS 2 tHP -tQHS t QH ns 25, 26 QHS 42 0.60 120,00 0 45 0.75 120,00 0 45 0.75 120,00 0 50 1 120,00 0 ns ns 35 tRAS ACTIVE to READ with Auto precharge command ACTIVE to ACTIVE/AUTO REFRESH command period AUTO REFRESH command period ACTIVE to READ or WRITE delay PRECHARGE command period DQS read preamble DQS read postamble ACTIVE bank a to ACTIVE bank b command DQS write preamble DQS write preamble setup time DQS write postamble Write recovery time Internal WRITE to READ command delay Data valid output window Average periodic refresh interval Terminating voltage delay to VDD tRAP tRAS(MIN) - (burst length * tCK/2) ns 46 t RC 60 72 18 18 0.9 0.4 12 0.25 0 0.4 15 1 t 65 75 20 20 1.1 0.6 0.9 0.4 15 0.25 0 0.6 0.4 15 1 t t 65 75 20 20 1.1 0.6 0.9 0.4 15 0.25 0 0.6 0.4 15 1 t t 70 80 20 20 1.1 0.6 0.9 0.4 15 0.25 0 0.6 0.4 15 1 t t t t ns ns ns ns 1.1 0.6 tCK tCK t RFC 50 tRCD tRP tRPRE tRPST t 42 RRD ns tCK tWPRE tWPRES tWPST tWR t ns 0.6 tCK 20, 21 19 ns CK ns us ns 25 WTR na QH - DQSQ 15.6 0 QH - DQSQ 15.6 0 QH - DQSQ 15.6 0 QH - DQSQ 15.6 0 tREFI tVTD V58C2128(804/404/164)S Rev. 1.6 March 2002 36 V58C2128(804/404/164)S -6 SYMBOL t CILETIV LESO M AC CHARACTERISTICS PARAMETER Exit SELF REFRESH to non-READ command Exit SELF REFRESH to READ command -7 MAX MIN 75 200 -75 MAX MIN 75 200 -8 MIN 75 200 MAX MIN MAX UNITS NOTES 80 200 t XSNR XSRD ns CK t V58C2128(804/404/164)S Rev. 1.6 March 2002 37 V58C2128(804/404/164)S CILETIV LESO M SLEW RATE DERATING VALUES (Notes: 14; notes appear on pages 50-53) 0C TA +70C; VDDQ= +2.5V 0.2V, VDD = +2.5V 0.2V) ADDRESS / COMMAND SPEED -6, -7, -75 -6, -7, -75 -6, -7, -75 -6, -7, -75 -8 -8 -8 -8 SLEW RATE 0.500V / ns 0.400V / ns 0.300V / ns 0.200V / ns 0.500V / ns 0.400V / ns 0.300V / ns 0.200V / ns t IS 1 t IH 1 1 1 1 UNITS ns ns ns ns ns ns ns ns NOTES 14 14 14 14 14 14 14 14 1.05 1.10 1.15 1.1 1.15 1.20 1.25 1.1 1.1 1.1 1.1 SLEW RATE DERATING VALUES (Note: 31; notes appear on pages 50-53) (0C TA +70C; V DDQ = +2.5V 0.2V, V DD = +2.5V 0.2V) Date, DQS, DM SPEED -7, -75 -7, -75 -7, -75 -7, -75 -8 -8 -8 -8 SLEW RATE 0.500V / ns 0.400V / ns 0.300V / ns 0.200V / ns 0.500V / ns 0.400V / ns 0.300V / ns 0.200V / ns tDS tDH UNITS ns ns ns ns ns ns ns ns NOTES 31 31 31 31 31 31 31 31 0.50 0.55 0.60 0.65 0.60 0.65 0.70 0.75 0.50 0.55 0.60 0.65 0.60 0.65 0.70 0.75 NOTES: 1. All voltages referenced to VSS. 2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Outputs measured with equivalent load: VTT 50 Output (VOUT) Reference Point 30pF V58C2128(804/404/164)S Rev. 1.6 March 2002 38 V58C2128(804/404/164)S CILETIV LESO M NOTES: (continued) 4. AC timing and IDD tests may use a VIL-to-VIH swing of up to 1.5V in the test environment, but input timing is still referenced to VREF (or to the crossing point for CK/CK), and parameter specifications are guaranteed for the specified AC input levels under normal use conditions. The minimum slew rate for the input signals used to test the device is 1V/ns in the range between VIL(AC) and VIH(AC). 5. The AC and DC input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result of the signal crossing the AC input level, and will remain in that state as long as the signal does not ring back above [below] the DC input LOW [HIGH] level). 6. VREF is expected to equal VDDQ/2 of the transmit-ting device and to track variations in the DC level of the same. Peak-to-peak noise (non-common mode) on VREF may not exceed 2 percent of the DC value. Thus, from VDDQ/2, VREF is allowed 25mV for DC error and an additional 25mV for AC noise. 7. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF and must track variations in the DC level of VREF. 8. VID is the magnitude of the difference between the input level on CK and the input level on CK. 9. The value of VIX is expected to equal VDDQ/2 of the transmitting device and must track varia-tions in the DC level of the same. 10. IDD is dependent on output loading and cycle rates. Specified values are obtained with minimum cycle time at CL = 2 for -6, -7 and -8, CL = 2.5 for -75 with the outputs open. 11. Enables on-chip refresh and address counters. 12. IDD specifications are tested after the device is properly initialized, and is averaged at the defined cycle rate. 13. This parameter is sampled. VDD = +2.5V 0.2V, VDDQ = +2.5V 0.2V, VREF = VSS, f = 100 MHz, T A = 25C, VOUT(DC) = VDDQ/2, VOUT (peak to peak) = 0.2V. DM input is grouped with I/O pins, reflecting the fact that they are matched in loading. 14. Command/Address input slew rate = 0.5V/ns. For -6, -7 and -75 with slew rates 1V/ns and faster, tIS and tIH are reduced to 900ps. If the slew rate is less than 0.5V/ns, timing must be derated: tIS has an additional 50ps per each 100mV/ns reduction in slew rate from the 500mV/ns. tIH has 0ps added, that is, it remains constant. If the slew rate exceeds 4.5V/ns, functionality is uncertain. 15. The CK/CK input reference level (for timing referenced to CK/CK) is the point at which CK and CK cross; the input reference level for signals other than CK/CK is VREF. 16. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE *0.3 x VDDQ is recognized as LOW. 17. The output timing reference level, as measured at the timing reference point indicated in Note 3, is VTT. 18. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) or begins driving (LZ). 19. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 20. This is not a device limit. The device will operate with a negative value, but system performance could be degraded due to bus turnaround. 21. It is recommended that DQS be valid (HIGH or LOW) on or before the WRITE command. The case shown (DQS going from High-Z to logic LOW) applies when no WRITEs were previously in progress on the bus. If a previous WRITE was in progress, DQS could be HIGH during this time, depending on tDQSS. 22. MIN (tRC or tRFC) for IDD measurements is the smallest multiple of tCK that meets the minimum absolute value for the respective parameter. tRAS (MAX) for IDD measurements is the largest multiple of tCK that meets the maximum absolute value for tRAS. V58C2128(804/404/164)S Rev. 1.6 March 2002 39 V58C2128(804/404/164)S ns CILETIV LESO M NOTES: (continued) 23. The refresh period 64ms. This equates to an average refresh rate of 15.625s. 24. The I/O capacitance per DQS and DQ byte/group will not differ by more than this maximum amount for any given device. 25. The valid data window is derived by achieving other specifications - tHP (tCK/2), tDQSQ, and tQH (tQH = tHP - tQHS). The data valid window derates directly porportional with the clock duty cycle and a practical data valid window can be derived. The clock is allowed a maximum duty cycle variation of 45/55. Functionality is uncertain when operating beyond a 45/55 ratio. The data valid window derating curves are provided below for duty cycles ranging between 50/50 and 45/55. 26. Referenced to each output group: x4 = DQS with DQ0-DQ3; x8 = DQS with DQ0-DQ7; x16 = LDQS with DQ0DQ7; and UDQS with DQ8-DQ15. 27. This limit is actually a nominal value and does not result in a fail value. CKE is HIGH during REFRESH command period (tRFC [MIN]) else CKE is LOW (i.e., during standby). 28. To maintain a valid level, the transitioning edge of the input must: a) Sustain a constant slew rate from the current AC level through to the target AC level, VIL(AC) or VIH(AC). b) Reach at least the target AC level. c) After the AC target level is reached, continue to maintain at least the target DC level, VIL(DC) or VIH(DC). 29. The Input capacitance per pin group will not differ by more than this maximum amount for any given device.. 30. CK and CK input slew rate must be *1V/ns. 31. DQ and DM input slew rates must not deviate from DQS by more than 10%. If the DQ/DM/DQS slew rate is less than 0.5V/ns, timing must be derated: 50ps must be added to tDS and tDH for each 100mv/ns reduction in slew rate. If slew rate exceeds 4V/ns, functionality is uncertain. 32. VDD must not vary more than 4% if CKE is not active while any bank is active. 3.8 3.750 3.6 3.400 3.4 3.2 -7, -75 @tCK = 10ns 3.700 3.650 3.600 3.550 3.350 3.500 3.300 3.450 3.250 3.400 3.200 3.350 3.150 3.300 3.100 3.250 3.050 3.0 2.8 2.6 2.4 2.2 2.0 1.8 50/50 -8, @tCK = 10ns -7, -75 @tCK = 7.5ns -8, @tCK = 8ns -7, @tCK = 7ns 3.000 2.950 2.900 2.500 2.463 2.425 2.388 2.350 2.313 2.275 2.238 2.200 2.163 2.125 49.5/50.5 49/51 48.5/52.5 48/52 47.5/53.5 47/53 46.5/54.5 46/54 45.5/55.5 45/55 NOTES: (continued) V58C2128(804/404/164)S Rev. 1.6 March 2002 40 V58C2128(804/404/164)S CILETIV LESO M 33. The clock is allowed up to 150ps of jitter. Each timing parameter is allowed to vary by the same amount. 34. tHP min is the lesser of tCL minimum and tCH minimum actually applied to the device CK and CK/ inputs, collectively during bank active. 35. READs and WRITEs with auto precharge are not allowed to be issued until tRAS(MIN) can be satisfied prior to the internal precharge com-mand being issued. 36. Applies to x16 only. First DQS (LDQS or UDQS) to transition to last DQ (DQ0-DQ15) to transition valid. Initial JEDEC specifications suggested this to be same as tDQSQ. 37. Normal Output Drive Curves: a) The full variation in driver pull-down current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure A. b) The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but no guaranteed, to lie within the inner bounding lines of the V-I curve of Figure A. c) The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure B. d)The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure B. e) The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between .71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0 Volt, and at the same voltage and temperature. f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity 10%, for device drain-to-source voltages from 0.1V to 1.0 Volt. g) On the x4, the QFC# output only has the pull-down characteristics which apply. 38. Reduced Output Drive Curves: a) The full variation in driver pull-down current from minimum to maximum process, tem-perature and voltage will lie within the outer bounding lines of the V-I curve of Figure C. b) The variation in driver pull-down current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure C. c) The full variation in driver pull-up current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure D. d)The variation in driver pull-up current within nominal limits of voltage and temperature is expected, but not guaranteed, to lie within the inner bounding lines of the V-I curve of Figure D. e) The full variation in the ratio of the maximum to minimum pull-up and pull-down current should be between .71 and 1.4, for device drain-to-source voltages from 0.1V to 1.0 V, and at the same voltage. f) The full variation in the ratio of the nominal pull-up to pull-down current should be unity 10%, for device drain-to-source voltages from 0.1V to 1.0 V. 39. The voltage levels used are derived from the referenced test load. In practice, the voltage levels obtained from a properly terminated bus will provide significantly different voltage values. 40. VIH overshoot: VIH(MAX) = VDDQ+1.5V for a pulse width *3ns and the pulse width can not be greater than 1/3 of the cycle rate. VIL undershoot: VIL(MIN) = -1.5V for a pulse width *3ns and the pulse width can not be greater than 1/3 of the cycle rate. 41. VDD and VDDQ must track each other. 42. Note 42 is not used. NOTES: (continued) V58C2128(804/404/164)S Rev. 1.6 March 2002 41 V58C2128(804/404/164)S 80 70 60 50 40 30 20 10 0 0.0 gh Nominal hi CILETIV LESO M 43. Note 43 is not used. 44. During initialization, VDDQ, VTT, and VREF must be equal to or less than VDD + 0.3V. Alternatively, VTT may be 1.35V maximum during power up, even if VDD /VDDQ are 0 volts, provided a minimum of 42 ohms of series resistance is used between the VTT supply and the input pin. 45. Note 45 is not used. 46. tRAP *t RCD. 47. Note 47 is not used. 48. Random addressing changing 50% of data changing at every transfer. 49. Random addressing changing 100% of data changing at every transfer. 50. CKE must be active (high) during the entire time a refresh command is executed. That is, from the time the AUTO REFRESH command is registered, CKE must be active at each rising clock edge, until tREF later. 51. IDD2N specifies the DQ, DQS, and DM to be driven to a valid high or low logic level. IDD2Q is similar to IDD2F except IDD2Q specifies the address and control inputs to remain stable. Although IDD2F, IDD2N, and IDD2Q are similar, IDD2F is "worst case." 52. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles. 0 imum Max -20 Minimum Nominal low -40 Nominal low -60 Nom inal Minimum -80 hig h -100 Ma xim um 2.5 -120 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 V58C2128(804/404/164)S Rev. 1.6 March 2002 42 V58C2128(804/404/164)S Iout(mA) Iout(mA) CILETIV LESO M 160 140 120 100 80 60 40 20 0 0.0 IBIS: I/V Characteristics for Input and Output Buffers Normal strength driver 1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a. 2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines the of the V-I curve of Figure a. Maximum TypicalHigh TypicalLow Minimum 0.5 1.0 1.5 2.0 2.5 Vout(V) 3. The nominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b. 4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure b. 0.0 0 -20 -40 -60 -80 -100 -120 -140 -160 -180 -200 -220 0.5 1.0 1.5 2.0 2.5 Minumum TypicalLow TypicalHigh Maximum VDDQ--Vout(V) 5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source voltage from 0 to VDDQ/2 6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity 10%, for device drain to source voltages from 0 to VDDQ/2 Figure 25. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) Pulldown Current (mA) Voltage (V) 0.1 Typical Low 6.0 Typical High 6.8 Minimum 4.6 Maximum 9.6 Typical Low -6.1 Pullup Current (mA) Typical High -7.6 Minimum -4.6 Maximum -10.0 V58C2128(804/404/164)S Rev. 1.6 March 2002 43 V58C2128(804/404/164)S 13.5 20.1 26.6 33.0 39.1 44.2 49.8 55.2 60.3 65.2 69.9 74.2 78.4 82.3 85.9 89.1 92.2 95.3 97.2 99.1 100.9 101.9 102.8 103.8 104.6 105.4 9.2 13.8 18.4 23.0 27.7 32.2 36.8 39.6 42.6 44.8 46.2 47.1 47.4 47.7 48.0 48.4 48.9 49.1 49.4 49.6 49.8 49.9 50.0 50.2 50.4 50.5 18.2 26.0 33.9 41.8 49.4 56.8 63.2 69.9 76.3 82.5 88.3 93.8 99.1 103.8 108.4 112.1 115.9 119.6 123.3 126.5 129.5 132.4 135.0 137.3 139.2 140.8 -12.2 -18.1 -24.0 -29.8 -34.3 -38.1 -41.1 -41.8 -46.0 -47.8 -49.2 -50.0 -50.5 -50.7 -51.0 -51.1 -51.3 -51.5 -51.6 -51.8 -52.0 -52.2 -52.3 -52.5 -52.7 -52.8 -14.5 -21.2 -27.7 -34.1 -40.5 -46.9 -53.1 -59.4 -65.5 -71.6 -77.6 -83.6 -89.7 -95.5 -101.3 -107.1 -112.4 -118.7 -124.0 -129.3 -134.6 -139.9 -145.2 -150.5 -155.3 -160.1 -9.2 -13.8 -18.4 -23.0 -27.7 -32.2 -36.0 -38.2 -38.7 -39.0 -39.2 -39.4 -39.6 -39.9 -40.1 -40.2 -40.3 -40.4 -40.5 -40.6 -40.7 -40.8 -40.9 -41.0 -41.1 -41.2 -20.0 -29.8 -38.8 -46.8 -54.4 -61.8 -69.5 -77.3 -85.2 -93.0 -100.6 -108.1 -115.5 -123.0 -130.4 -136.7 -144.2 -150.5 -156.9 -163.2 -169.6 -176.0 -181.3 -187.6 -192.9 -198.2 CILETIV LESO M 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 12.2 18.1 24.1 29.8 34.6 39.4 43.7 47.5 51.3 54.1 56.2 57.9 59.3 60.1 60.5 61.0 61.5 62.0 62.5 62.9 63.3 63.8 64.1 64.6 64.8 65.0 Table 17. Pull down and pull up current values Temperature (Tambient) Typical 25C Minimum 70C Maximum 0C Vdd/Vddq Typical Minimum Maximum 2.5V 2.3V 2.7V The above characteristics are specified under best, worst and normal process variation/conditions V58C2128(804/404/164)S Rev. 1.6 March 2002 44 V58C2128(804/404/164)S Iout(mA) Iout(mA) Iout(mA) CILETIV LESO M Half strength driver 1. The nominal pulldown V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of Figure a. 2. The full variation in driver pulldown current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines the of the V-I curve of Figure a. 90 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 Maximum TypicalHigh TypicalLow Minimum Vout(V) 3. Thenominal pullup V-I curve for DDR SDRAM devices will be within the inner bounding lines of the V-I curve of below Figure b. 4. The Full variation in driver pullup current from minimum to maximum process, temperature and voltage will lie within the outer bounding lines of the V-I curve of Figure b. 0.0 0 0.5 1.0 1.5 2.0 2.5 -10 -20 -30 Minumum TypicalLow -40 -50 -60 TypicalHigh -70 -80 Maximum -90 VDDQ--Vout(V) 5. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7, for device drain to source voltage from 0 to VDDQ/2 6. The Full variation in the ratio of the nominal pullup to pulldown current should be unity 10%, for device drain to source voltages from 0 to VDDQ/2 Figure 26. I/V characteristics for input/output buffers:Pull up(above) and pull down(below) Pulldown Current (mA) Voltage (V) 0.1 Typical Low 3.4 Typical High 3.8 Minimum 2.6 Maximum 5.0 Typical Low -3.5 Pullup Current (mA) Typical High -4.3 Minimum -2.6 Maximum -5.0 V58C2128(804/404/164)S Rev. 1.6 March 2002 45 V58C2128(804/404/164)S Pulldown Current (mA) Pullup Current (mA) Maximum 9.9 14.6 19.2 23.6 28.0 32.2 35.8 39.5 43.2 46.7 50.0 53.1 56.1 58.7 61.4 63.5 65.6 67.7 69.8 71.6 73.3 74.9 76.4 77.7 78.8 79.7 Typical Low -6.9 -10.3 -13.6 -16.9 -19.4 -21.5 -23.3 -24.8 -26.0 -27.1 -27.8 -28.3 -28.6 -28.7 -28.9 -28.9 -29.0 -29.2 -29.2 -29.3 -29.5 -29.5 -29.6 -29.7 -29.8 -29.9 Typical High -8.2 -12.0 -15.7 -19.3 -22.9 -26.5 -30.1 -33.6 -37.1 -40.3 -43.1 -45.8 -48.4 -50.7 -52.9 -55.0 -56.8 -58.7 -60.0 -61.2 -62.4 -63.1 -63.8 -64.4 -65.1 -65.8 Minimum -5.2 -7.8 -10.4 -13.0 -15.7 -18.2 -20.4 -21.6 -21.9 -22.1 -22.2 -22.3 -22.4 -22.6 -22.7 -22.7 -22.8 -22.9 -22.9 -23.0 -23.0 -23.1 -23.2 -23.2 -23.3 -23.3 Maximum -9.9 -14.6 -19.2 -23.6 -28.0 -32.2 -35.8 -39.5 -43.2 -46.7 -50.0 -53.1 -56.1 -58.7 -61.4 -63.5 -65.6 -67.7 -69.8 -71.6 -73.3 -74.9 -76.4 -77.7 -78.8 -79.7 CILETIV LESO M Voltage (V) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 Typical Low 6.9 10.3 13.6 16.9 19.6 22.3 24.7 26.9 29.0 30.6 31.8 32.8 33.5 34.0 34.3 34.5 34.8 35.1 35.4 35.6 35.8 36.1 36.3 36.5 36.7 36.8 Typical High 7.6 11.4 15.1 18.7 22.1 25.0 28.2 31.3 34.1 36.9 39.5 42.0 44.4 46.6 48.6 50.5 52.2 53.9 55.0 56.1 57.1 57.7 58.2 58.7 59.2 59.6 Minimum 5.2 7.8 10.4 13.0 15.7 18.2 20.8 22.4 24.1 25.4 26.2 26.6 26.8 27.0 27.2 27.4 27.7 27.8 28.0 28.1 28.2 28.3 28.3 28.4 28.5 28.6 Table 18. Pull down and pull up current values Temperature (Tambient) Typical 25C Minimum 70C Maximum 0C Vdd/Vddq Typical 2.5V Minimum 2.3V Maximum 2.7V The above characteristics are specified under best, worst and normal process variation/conditions V58C2128(804/404/164)S Rev. 1.6 March 2002 46 V58C2128(804/404/164)S Figure 36 - DATA INPUT (WRITE) TIMING tDSL tDSH CILETIV LESO M DQS tDS DI n DQ tDH tDS DM tDH DON'T CARE DI n = Data In for column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following DI n Figure 37 - DATA OUTPUT (READ) TIMING tDQSQ max t DQSQ nom tDQSQ max DQS DQ tDQSQ min tDQSQ min 1. tDQSQ max occurs when DQS is the earliest among DQS and DQ signals to transition. 2. tDQSQ min occurs when DQS is the latest among DQS and DQ signals to transition. 3. tDQSQ nom, shown for reference, occurs when DQS transitions in the center among DQ signal transitions. DQS, DQ tDV Burst Length = 4 in the case shown V58C2128(804/404/164)S Rev. 1.6 March 2002 47 V58C2128(804/404/164)S Figure 38 - INITIALIZE AND MODE REGISTER SETS COMMAND A0-A9, A11 CILETIV LESO M VDD VDDQ VTT (system*) VREF t VTD tCK tCH /CK CK (( )) (( )) tCL (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) t IS t IH CKE LVCMOS LOW LEVEL (( )) tIS (( )) (( )) (( )) (( )) tIH PRE EMRS (( )) (( )) (( )) (( )) NOP MRS PRE AR AR MRS ACT DM tIS (( )) (( )) (( )) (( )) (( )) (( )) tIH CODE (( )) (( )) (( )) (( )) CODE (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) CODE RA ALL BANKS tIS tIH ALL BANKS A10 CODE CODE (( )) (( )) (( )) (( )) tIS tIH tIS tIH (( )) (( )) tIS BA0=L, BA1=L (( )) (( )) tIH (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) CODE RA BA0, BA1 BA0=H, BA1=L BA0=L, BA1=L BA DQS DQ (( )) (( )) T = 200s High-Z (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) High-Z t MRD Power-up: VDD and CLK stable Extended Mode Register Set t MRD t RP t RFC t RFC t MRD 200 cycles of CLK** Load Mode Register (with A8 = L) DON'T CARE Load Mode Register, Reset DLL (with A8 = H) * = VTT is not applied directly to the device, however tVTD must be greater than or equal to zero to avoid device latch-up. ** = tMRD is required before any command can be applied, and 200 cycles of CK are required before a READ command can be applied. The two Auto Refresh commands may be moved to follow the first MRS, but precede the second PRECHARGE ALL command. V58C2128(804/404/164)S Rev. 1.6 March 2002 48 V58C2128(804/404/164)S Figure 39 - POWER-DOWN MODE tCK tCH tCL (( )) (( )) CILETIV LESO M /CK CK tIS tIH CKE tIS COMMAND tIH NOP tIS tIS (( )) VALID* tIS ADDR tIH (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) NOP VALID VALID VALID DQS DQ DM Enter Power-Down Mode Exit Power-Down Mode DON'T CARE No column accesses are allowed to be in progress at the time Power-Down is entered * = If this command is a PRECHARGE (or if the device is already in the idle state) then the Power-Down mode shown is Precharge Power Down. If this command is an ACTIVE (or if at least one row is already active) then the Power-Down mode shown is Active Power Down. V58C2128(804/404/164)S Rev. 1.6 March 2002 49 V58C2128(804/404/164)S Figure 40 - AUTO REFRESH MODE tCK tCH tCL (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) CILETIV LESO M /CK CK CKE tIS COMMAND tIH PRE NOP NOP AR tIS tIH VALID VALID NOP NOP AR NOP NOP ACT A0-A8 RA A9, A11 ALL BANKS RA A10 ONE BANK (( )) (( )) RA tIS BA0, BA1 tIH (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) *Bank(s) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) BA DQS DQ DM t RP t RC t RC DON'T CARE * = "Don't Care", if A10 is HIGH at this point; A10 must be HIGH if more than one bank is active (i.e. must precharge all active banks) PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address, AR = AUTOREFRESH NOP commands are shown for ease of illustration; other valid commands may be possible at these times DM, DQ and DQS signals are all "Don't Care"/High-Z for operations shown V58C2128(804/404/164)S Rev. 1.6 March 2002 50 V58C2128(804/404/164)S Figure 41 - SELF REFRESH MODE tCK CILETIV LESO M tCH /CK CK tIS tIH CKE tIS COMMAND tIH tCL clock must be stable before exiting Self Refresh mode (( )) (( )) (( )) (( )) (( )) (( )) tIS tIS NOP AR (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) NOP (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) (( )) VALID tIS tIH ADDR VALID DQS DQ DM tRP* Enter Self Refresh Mode tXSNR/ tXSRD** Exit Self Refresh Mode DON'T CARE * = Device must be in the "All banks idle" state prior to entering Self Refresh mode ** = tXSNR is required before any non-READ command can be applied, and tXSRD (200 cycles of CLK) are required before a READ command can be applied. V58C2128(804/404/164)S Rev. 1.6 March 2002 51 V58C2128(804/404/164)S Figure 42 - READ - WITHOUT AUTO PRECHARGE CILETIV LESO M tCK /CK CK CKE tIS COMMAND x4:A0-A9 x8:A0-A8 x16:A0-A7 x4:A11 x8:A9, A11 x16:A8, A9, A11 A10 DIS AP ONE BANK tCH tCL tIS tIH tIH tIH READ NOP StartAutoprecharge PRE NOP NOP ACT VALID VALID VALID NOP NOP NOP NOP tIS tIH RA Col n RA tIS tIH ALL BANKS RA tIS BA0, BA1 tIH *Bank x Bank x Bank x CL = 2 DM Case 1: tAC/tDQSCK = min /QFC (optional) tQPRE t DQSCK min tRPRE DQS tLZ min tLZ min Case 2: tAC/tDQSCK = max /QFC (optional) tQPRE tRP tQPST tRPST DQ DO n tHZ min tAC min tQPST tRPRE DQS tLZ max tLZ max t DQSCK max tRPST DQ DO n tHZ max t AC max DON'T CARE DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n DIS AP = Disable Autoprecharge * = "Don't Care", if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times V58C2128(804/404/164)S Rev. 1.6 March 2002 52 V58C2128(804/404/164)S Figure 43 - READ - WITH AUTO PRECHARGE tCK tCH tCL CILETIV LESO M /CK CK CKE tIS COMMAND x4:A0-A9 x8:A0-A8 x16:A0-A7 x4:A11 x8:A9, A11 x16:A8, A9, A11 A10 DIS AP ONE BANK tIS tIH tIH VALID VALID VALID tIH READ NOP PRE NOP NOP ACT NOP NOP NOP NOP tIS tIH RA Col n RA tIS tIH ALL BANKS RA tIS BA0, BA1 tIH *Bank x Bank x Bank x CL = 2 DM Case 1: tAC/tDQSCK = min /QFC (optional) tQPRE t DQSCK min tRPRE DQS tLZ min tLZ min Case 2: tAC/tDQSCK = max /QFC (optional) tQPRE tRP tQPST tRPST DQ DO n tHZ min tAC min tQPST tRPRE DQS tLZ max tLZ max t DQSCK max tRPST DQ DO n tHZ max t AC max DON'T CARE DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n DIS AP = Disable Autoprecharge * = "Don't Care", if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times V58C2128(804/404/164)S Rev. 1.6 March 2002 53 V58C2128(804/404/164)S Figure 44 - BANK READ ACCESS tCK tCH tCL CILETIV LESO M /CK CK CKE tIS COMMAND tIH ACT NOP NOP NOP READ NOP tIS tIH NOP PRE NOP NOP ACT tIS x4:A0-A9 x8:A0-A8 x16:A0-A7 x4:A11 x8:A9, A11 x16:A8, A9, A11 A10 RA tIH Col n RA RA RA tIS RA tIH ALL BANKS RA DIS AP ONE BANK tIS BA0, BA1 tIH Bank x *Bank x Bank x Bank x tRC tRAS tRCD CL = 2 tRP DM Case 1: tAC/tDQSCK = min /QFC (optional) tQPRE t DQSCK min tRPRE DQS tLZ min tLZ min Case 2: tAC/tDQSCK = max /QFC (optional) tQPRE tQPST tHZ min tAC min tRPST tQPST DQ DO n tRPRE DQS tLZ max tLZ max t DQSCK max tRPST DQ DO n tHZ max t AC max DON'T CARE DO n = Data Out from column n Burst Length = 4 in the case shown 3 subsequent elements of Data Out are provided in the programmed order following DO n DIS AP = Disable Autoprecharge * = "Don't Care", if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other commands may be valid at these times Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS would be limiting) V58C2128(804/404/164)S Rev. 1.6 March 2002 54 V58C2128(804/404/164)S Figure 45 - WRITE - WITHOUT AUTO PRECHARGE tCK tCH tCL CILETIV LESO M /CK CK CKE tIS COMMAND tIH WRITE NOP NOP NOP NOP PRE tIS tIH tIH VALID NOP NOP NOP ACT tIS x4:A0-A9 x8:A0-A8 x16:A0-A7 x4:A11 x8:A9, A11 x16:A8, A9, A11 A10 tIH RA Col n RA tIS tIH ALL BANKS RA DIS AP ONE BANK tIS BA0, BA1 tIH *Bank x BA Bank x tRP Case 1: tDQSS = min tDQSS DQS tWPRES tWPRE DI n tDSH tDQSH tDSH tWR tWPST tDQSL DQ DM tQCK tQOH MAX /QFC (optional) Case 2: tDQSS = max tDQSS DQS tWPRES tWPRE tDSS tDQSH tDSS tWPST tDQSL DQ DI n DM tQOH MIN /QFC (optional) tQCK DON'T CARE DI n = Data In for column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following DI n DIS AP = Disable Autoprecharge * = "Don't Care", if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other valid commands may be possible at these times V58C2128(804/404/164)S Rev. 1.6 March 2002 55 V58C2128(804/404/164)S Figure 46 - WRITE - WITH AUTO PRECHARGE tCK tCH tCL CILETIV LESO M /CK CK CKE tIS COMMAND x4:A0-A9 x8:A0-A8 x16:A0-A7 x4:A11 x8:A9, A11 x16:A8, A9, A11 EN AP tIS tIH VALID VALID VALID tIH WRITE NOP NOP NOP NOP NOP NOP NOP ACT NOP tIS tIH RA Col n RA A10 tIS BA0, BA1 tIH RA Bank x BA tDAL Case 1: tDQSS = min tDQSS DQS tWPRES tWPRE DI n tDSH tDQSH tDSH tWPST tDQSL DQ DM tQCK tQOH MAX /QFC (optional) Case 2: tDQSS = max tDQSS DQS tWPRES tWPRE tDSS tDQSH tDSS tWPST tDQSL DQ DI n DM tQCK tQOH MIN /QFC (optional) DON'T CARE DI n = Data In for column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following DI n EN AP = Enable Autoprecharge ACT = ACTIVE, RA = Row Address, BA = Bank Address NOP commands are shown for ease of illustration; other valid commands may be possible at these times V58C2128(804/404/164)S Rev. 1.6 March 2002 56 V58C2128(804/404/164)S Figure 47 - BANK WRITE ACCESS tCK tCH tCL CILETIV LESO M /CK CK CKE tIS COMMAND tIH ACT NOP NOP WRITE NOP NOP tIS tIH NOP NOP NOP PRE tIS x4:A0-A9 x8:A0-A8 x16:A0-A7 x4:A11 x8:A9, A11 x16:A8, A9, A11 A10 RA tIH Col n RA tIS RA tIH ALL BANKS DIS AP ONE BANK tIS BA0, BA1 tIH Bank x *Bank x Bank x tRAS tRCD Case 1: tDQSS = min tDQSS DQS tWPRES tWPRE DI n tWR tDSH tDQSH tDSH tWPST tDQSL DQ DM tQCK tQOH MAX /QFC (optional) Case 2: tDQSS = max tDQSS DQS tWPRES tWPRE tDSS tDQSH tDSS tWPST tDQSL DQ DI n DM tQOH MIN /QFC (optional) tQCK DON'T CARE DI n = Data In for column n Burst Length = 4 in the case shown 3 subsequent elements of Data In are applied in the programmed order following DI n DIS AP = Disable Autoprecharge * = "Don't Care", if A10 is HIGH at this point PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address NOP commands are shown for ease of illustration; other valid commands may be possible at these times V58C2128(804/404/164)S Rev. 1.6 March 2002 57 V58C2128(804/404/164)S #66 #34 (0.80) (0.50) (10* ) (10*) 0.125 +0.075 -0.035 (0.50) 0 ~8 (R 0. 2 5 ) 10.16 0.10 (1.50) #1 (1.50) #33 0.665 0.05 0.210 0.05 1.00 0.10 ) (R 0. 15 ) 0.05 MIN (0.71) 0.65TYP 0.65 0.08 0.30 0.08 (10*) 0.10 MAX [ 0.075 MAX ] NOTE 1. ( ) IS REFERENCE V58C2128(804/404/164)S Rev. 1.6 March 2002 58 (R 0. 25 ) ( 4* ) (R 0.1 5 (10*) 0.25TYP 0.45~0.75 1.20MAX 22.22 0.10 (0.80) 11.76 0.20 (10.76) CILETIV LESO M Package Diagram 66-Pin TSOP-II (400 mil) Units : Millimeters V58C2128(804/404/164)S CILETIV LESO M WORLDWIDE OFFICES U.S.A. 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 TAIWAN 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888 FAX: 886-3-566-5888 SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE STRATHCLYDE BUSINESS PARK BELLSHILL, LANARKSHIRE, SCOTLAND, ML4 3NQ PHONE: 44-1698-748515 FAX: 44-1698-748516 JAPAN ONZE 1852 BUILDING 6F 2-14-6 SHINTOMI, CHUO-KU TOKYO 104-0041 PHONE: 03-3537-1400 FAX: 03-3537-1402 GERMANY (CONTINENTAL EUROPE & ISRAEL) BENZSTRASSE 32 71083 HERRENBERG GERMANY PHONE: +49 7032 2796-0 FAX: +49 7032 2796 22 U.S. SALES OFFICES WEST 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 CENTRAL / EAST 604 FIELDWOOD CIRCLE RICHARDSON, TX 75081 PHONE: 214-352-3775 FAX: 214-904-9029 (c) Copyright , MOSEL VITELIC Corp. Printed in U.S.A. The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC. MOSEL VITELIC subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. V58C2128(804/404/164)S Rev. 1.6 March 2002 59 |
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